digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr1718 series silicon controlled rectifier available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak reverse blocking voltage (1) mcr1718-5 MCR1718-6 mcr1718-7 mcr1718-8 v rrm 300 400 500 600 volts non-repetitive peak reverse voltage (transient, non-recurrent 5 ms(max) mcr1718-5 MCR1718-6 mcr1718-7 mcr1718-8 v rsm 400 500 600 700 volts forward current rms i t(rms) 25 amp peak forward surge current (1-10 s pulse width) i tsm 1000 amp current application rate (up to 1000 adc peak) di/dt 1000 a/s circuit fusing considerations (t j = -65 to +125c; t 1.0 ms) i 2 t 250 a 2 s dynamic average power (t c = 65c) p f(av) 30 watts peak gate power ?forward p gm 20 watts average gate power ? forward p g(av) 1.0 watt peak gate current ? forward i gm 5.0 amp peak gate voltage v gm 10 volts operating junction temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c stud torque - 30 in.-lb note 1: v rrm for all types can be applied on a continuous dc basis without incurring damage. ratings apply for zero or negative gate volta ge. thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.0 c/w electrical characteristics (t c = 25 unless otherwise noted) characteristic symbol min. typ. max. units peak forward blocking voltage (2) (t j = 125c) mcr1718-5 MCR1718-6 mcr1718-7 mcr1718-8 v drm 300 400 500 600 - - - - - - - - volts peak forward blocking current (rated v drm with gate open, t j = 125c) i drm - - 8.0 ma peak reverse blocking current (rated v rrm with gate open, t j = 125c) i rrm - - 8.0 ma forward ?on? voltage (i f = 25 adc) (i gt = 500 ma, i pulse = 500 amps) (1s after start (10% pt.) of i pulse ) (5.0s after start (10% pt.) of i pulse ) v tm - - - 1.1 0.30 5.0 1.3 - - volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130128
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr1718-5 through mcr1718-8 silicon controlled rectifier electrical characteristics (t c = 25 unless otherwise noted) characteristic symbol min. typ. max. units gate trigger current (continuous dc) (anode voltage = 7.0 vdc, r l = 50 ohms) i gt - 10 50 ma gate trigger voltage (continuous dc) (anode voltage = 7.0 vdc, r l = 50 ohms) (anode voltage = rated v drm , r l = 500 ohms, t j = 125c) v gt v gd - 0.25 0.8 - 1.5 - volts holding current (anode voltage = 7.0 vdc, gate open) (anode voltage = 7.0 vdc, gate open, t j = 125c) i h 5.0 - 15 6.0 - - ma circuit commutated turn-off time (i f = 500 a, i r = 10a, dv/dt = 20 v/s) (conductive charging circuit ? circuit dependent) t q - 20 - s critical exponential rate of rise (gate open, t j = 125c) dv/dt - 100 - v/s note 2: v drm for all types can be supplied on a continuous basis without incurring damage. ratings apply for zero or negative gate voltage . mechanical characteristics case to-48 marking alpha-numeric polarity stud is cathode to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130128
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